| PART |
Description |
Maker |
| BCR5KM |
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
|
Renesas Electronics Corporation
|
| BCR08AM |
MITSUBISHI SEMICONDUCTOR
LOW POWER USE PLANAR PASSIVATION TYPE
|
RENESAS[Renesas Electronics Corporation]
|
| BCR1AM-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR20KM |
BCR20KM Datasheet 385K/MAR.20.03 BCR20KM数据385K/MAR.20.03
MITSUBISHI SEMICONDUCTOR TRIAC
|
Renesas Electronics Corporation
|
| BCR3AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR30GM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR16HM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR6PM-12 CR6PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR8PM-12 CR8PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| GMS81C2112 GMS81C2112K GMS81C2112Q GMS81C2120K GMS |
HYNIX SEMICONDUCTOR 8-BIT SINGLE-CHIP MICROCONTROLLERS 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PDIP40
HYNIX SEMICONDUCTOR 8-BIT SINGLE-CHIP MICROCONTROLLERS 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PDIP42
HYNIX SEMICONDUCTOR 8-BIT SINGLE-CHIP MICROCONTROLLERS 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PQFP44
HYNIX SEMICONDUCTOR 8-BIT SINGLE-CHIP MICROCONTROLLERS 8-BIT, OTPROM, 8 MHz, MICROCONTROLLER, PDIP42
|
Hynix Semiconductor, Inc.
|
